2N1015B
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1015B
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Internal Junction Configuration
npn
-
Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
-
Specification/Standard Data
80131-release2700 professional/industrial association specification
-
Internal Configuration
junction contact
-
Overall Diameter
1.046 inches nominal
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Nominal Thread Size
0.312 inches
-
Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-emitter, base open and 25.0 maximum breakdown voltage, emitter-to-base, collector open
-
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector minimum
-
Overall Length
0.546 inches maximum
-
Current Rating Per Characteristic
7.50 amperes source cutoff current maximum and 5.00 amperes source cutoff current minimum
-
Inclosure Material
metal
-
Mounting Method
threaded stud
-
Terminal Type And Quantity
1 tab, solder lug and 2 tab, solder lug
-
Mounting Facility Quantity
1
-
Thread Series Designator
unf