103H086615JR
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
103H086615JR
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-64
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Nominal Thread Size
0.500 inches
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Thread Series Designator
unf
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Terminal Type And Quantity
3 tab w/wire lead
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Overall Length
7.500 inches maximum
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Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector blank
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Semiconductor Material
silicon
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Current Rating Per Characteristic
3.00 milliamperes forward current, average peak
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Special Features
junction pattern arrangement: pnpn
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Voltage Rating In Volts Per Characteristic
600.0 maximum repetitive peak reverse voltage and 720.0 maximum nonrepetitive peak reverse voltage and 600.0 maximum breakover voltage, dc
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Overall Width Across Flats
1.062 inches maximum
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Inclosure Material
metal