2N3599
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3599
5961 - Semiconductor Devices and Associated Hardware
Microsemi Corp. - Massachusetts
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Mounting Method
threaded stud
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Facility Quantity
1
-
Overall Length
0.535 inches maximum
-
Thread Series Designator
unf
-
Current Rating Per Characteristic
20.00 amperes source cutoff current maximum and 5.00 amperes source cutoff current minimum
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Terminal Type And Quantity
3 tab, solder lug
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Overall Width Across Flats
0.875 inches maximum
-
Nominal Thread Size
0.312 inches
-
Voltage Rating In Volts Per Characteristic
8.0 maximum breakdown voltage, emitter-to-base, collector open and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
-
Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector minimum
-
Inclosure Material
metal
-
Transfer Ratio
225.0 maximum static forward current transfer ratio, common-emitter
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-63