579R756H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
579R756H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to emitter reverse voltage and 6.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
4.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Special Features
junction pattern arrangement: npn
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Overall Length
0.070 inches nominal
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Terminal Length
1.000 inches minimum
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Overall Diameter
0.219 inches nominal
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current, dc
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Terminal Type And Quantity
3 uninsulated wire lead