2N1666
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1666
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
pnp
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, emitter-to-base, collector open and 60.0 maximum breakdown voltage, collector-to-emitter, base open
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Current Rating Per Characteristic
6.00 amperes maximum collector current, dc and 1.00 amperes maximum base current, dc
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Power Rating Per Characteristic
666.0 milliwatts maximum collector power dissipation
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Terminal Type And Quantity
2 pin
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Specification/Standard Data
80131-release4350 professional/industrial association specification
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Overall Length
0.410 inches maximum
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Overall Diameter
0.800 inches maximum
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Mounting Method
unthreaded hole
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Semiconductor Material
germanium
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction