2N1130
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1130
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Overall Length
0.390 inches nominal
-
Overall Diameter
0.300 inches nominal
-
Internal Configuration
junction contact
-
Internal Junction Configuration
pnp
-
Mounting Method
terminal
-
Terminal Circle Diameter
0.200 inches nominal
-
Features Provided
hermetically sealed case
-
Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open
-
~1
emitter current, dc
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Specification/Standard Data
80131-release2417 professional/industrial association specification
-
Semiconductor Material
germanium
-
Current Rating Per Characteristic
250.00 milliamperes maximum collector current, dc and 10.00 milliamperes maximum
-
Power Rating Per Characteristic
150.0 milliwatts maximum collector power dissipation
-
Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction