4JD1E30
Semiconductor Devices and Associated Hardware
TRANSISTOR
4JD1E30
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.195 inches maximum
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Overall Diameter
0.460 inches nominal
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Features Provided
hermetically sealed case
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Semiconductor Material
germanium
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~1
r voltage, dc
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Voltage Rating In Volts Per Characteristic
-45.0 maximum collector to base voltage, dc and 20.0 maximum collector to emitte
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~1
emitter current, dc
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Current Rating Per Characteristic
-50.00 milliamperes maximum collector current, dc and 50.00 milliamperes maximum
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Power Rating Per Characteristic
0.5 milliwatts maximum collector power dissipation
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Terminal Type And Quantity
3 uninsulated wire lead
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Terminal Length
1.500 inches minimum
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Mounting Method
terminal
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction