F429
Semiconductor Devices and Associated Hardware
TRANSISTOR
F429
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Overall Diameter
0.620 inches maximum
-
Inclosure Material
metal
-
Mounting Method
unthreaded hole
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Facility Quantity
2
-
Terminal Type And Quantity
1 case and 2 uninsulated wire lead
-
Semiconductor Material
silicon
-
Features Provided
hermetically sealed case
-
Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector minimum
-
Special Features
junction pattern arrangement: npn
-
Voltage Rating In Volts Per Characteristic
225.0 maximum breakdown voltage, collector-to-emitter, base open and 250.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
-
Current Rating Per Characteristic
500.00 milliamperes source cutoff current minimum and 250.00 milliamperes source cutoff current maximum
-
Internal Configuration
junction contact
-
Specification/Standard Data
80131-release5109 professional/industrial association specification
-
Electrode Internally-Electrically Connected To Case
collector
-
Overall Length
0.340 inches maximum