L470521

Semiconductor Devices and Associated Hardware

TRANSISTOR

L470521

5961-00-850-8921

5961 - Semiconductor Devices and Associated Hardware

Gems Sensors A Division Of Danaher

TRANSISTOR

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Technical Characteristics

  • Overall Diameter

    0.620 inches maximum

  • Inclosure Material

    metal

  • Mounting Method

    unthreaded hole

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    1 case and 2 uninsulated wire lead

  • Semiconductor Material

    silicon

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    20.0 watts small-signal input power, common-collector minimum

  • Special Features

    junction pattern arrangement: npn

  • Voltage Rating In Volts Per Characteristic

    225.0 maximum breakdown voltage, collector-to-emitter, base open and 250.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    500.00 milliamperes source cutoff current minimum and 250.00 milliamperes source cutoff current maximum

  • Internal Configuration

    junction contact

  • Specification/Standard Data

    80131-release5109 professional/industrial association specification

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    0.340 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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