2N1309
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1309
5961 - Semiconductor Devices and Associated Hardware
Joint Army-Navy Specifications
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Technical Characteristics
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Current Rating Per Characteristic
300.00 milliamperes source cutoff current maximum and 6.00 microamperes zero-gate-voltage source current preset
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Semiconductor Material
germanium
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case and electrostatic sensitive
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Diameter
0.370 inches maximum
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Inclosure Material
glass
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Overall Length
0.260 inches maximum
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Special Features
junction pattern arrangement: pnp
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
150.0 milliwatts small-signal input power, common-collector minimum
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Terminal Length
1.500 inches minimum