JAN2N1309
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N1309
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Current Rating Per Characteristic
300.00 milliamperes source cutoff current maximum and 6.00 microamperes zero-gate-voltage source current preset
-
Semiconductor Material
germanium
-
Internal Configuration
junction contact
-
Features Provided
hermetically sealed case and electrostatic sensitive
-
Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, emitter-to-base, collector open
-
Overall Diameter
0.370 inches maximum
-
Inclosure Material
glass
-
Overall Length
0.260 inches maximum
-
Special Features
junction pattern arrangement: pnp
-
Mounting Method
terminal
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Electrode Internally-Electrically Connected To Case
collector
-
Power Rating Per Characteristic
150.0 milliwatts small-signal input power, common-collector minimum
-
Terminal Length
1.500 inches minimum