2N639
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N639
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
1.573 inches maximum
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Overall Height
0.450 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Semiconductor Material
germanium
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage,emitter-to-base,collector open
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Power Rating Per Characteristic
25.0 watts maximum collector power dissipation
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Transfer Ratio
30.0 maximum static forward current transfer ratio,common-emitter
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Terminal Type And Quantity
2 pin and 1 case
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Inclosure Material
metal
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Terminal Length
0.312 inches minimum
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Overall Width
1.050 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
5.00 amperes maximum collector current,dc and 0.50 amperes maximum base current,dc
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction