2N3584
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3584
5961 - Semiconductor Devices and Associated Hardware
Joint Electron Device Engineering
TRANSISTOR
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Technical Characteristics
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Specification/Standard Data
80131-release4901 professional/industrial association specification
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Length
1.252 inches maximum
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Overall Height
0.340 inches maximum
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Overall Width
0.700 inches maximum
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Power Rating Per Characteristic
35.0 watts small-signal input power, common-collector minimum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Electrode Internally-Electrically Connected To Case
collector
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Transfer Ratio
100.0 maximum static forward current transfer ratio, common-emitter
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
6.0 maximum emitter to base voltage, static, collector open and 375.0 maximum breakdown voltage, collector-to-base, emitter open and 250.0 maximum breakdown voltage, collector-to-emitter, base open
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum