2N1407
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1407
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Overall Length
0.260 inches maximum
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Overall Diameter
0.370 inches maximum
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 20.0 maximum breakdown voltage, collector-to-emitter, base open and 0.5 maximum emitter to base voltage, static, collector open
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Specification/Standard Data
80131-release3509 professional/industrial association specification
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Transfer Ratio
10.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius ambient air
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Terminal Length
0.500 inches minimum
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-12
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Semiconductor Material
germanium
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Inclosure Material
metal
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Power Rating Per Characteristic
75.0 milliwatts small-signal input power, common-collector preset
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Terminal Type And Quantity
4 uninsulated wire lead
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Internal Junction Configuration
pnp
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal