2N1327
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1327
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.650 inches maximum
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Semiconductor Material
germanium
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage,collector-to-base,emitter open and 15.0 maximum breakdown voltage,emitter-to-base,collector open and 80.0 maximum breakdown voltage,collector-to-emitter,base open
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Power Rating Per Characteristic
333.0 milliwatts maximum collector power dissipation
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Thread Series Designator
unef
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Specification/Standard Data
80131-release2590 professional/industrial association specification
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Overall Length
0.290 inches minimum and 0.440 inches maximum
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Mounting Facility Quantity
1
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Internal Junction Configuration
npn
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Nominal Thread Size
0.190 inches
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Current Rating Per Characteristic
3.00 amperes maximum collector current,dc
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Terminal Type And Quantity
3 tab,solder lug