SG1169
Semiconductor Devices and Associated Hardware
TRANSISTOR
SG1169
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
metal
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Electrode Internally-Electrically Connected To Case
collector
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Voltage Rating In Volts Per Characteristic
-75.0 maximum collector to base voltage/static/emitter open and -60.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
3.0 watts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction