C222C

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

C222C

5961-00-868-9837

5961 - Semiconductor Devices and Associated Hardware

General Electric Co

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Inclosure Material

    glass and metal

  • Overall Diameter

    0.420 inches nominal

  • Iii End Item Identification

    general application electronics (gen-ap-e)

  • Internal Configuration

    junction contact

  • Mounting Method

    terminal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    300.0 maximum breakover voltage, dc

  • Current Rating Per Characteristic

    80.00 amperes maximum average forward current averaged over a full 60-hz cycle

  • Power Rating Per Characteristic

    500.0 milliwatts maximum peak gate power dissipation

  • Special Features

    junction pattern arrangement: pnpn

  • Overall Length

    0.625 inches nominal

  • Terminal Length

    0.420 inches nominal

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Terminal Type And Quantity

    2 tab, solder lug and 1 case

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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