579R799H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
579R799H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
800.0 milliwatts maximum total device dissipation
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Electrode Internally-Electrically Connected To Case
collector
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Internal Configuration
junction contact
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Overall Length
0.250 inches nominal
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current,dc and 1.00 milliamperes maximum emitter current,dc
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Voltage Rating In Volts Per Characteristic
75.0 maximum collector to base voltage/static/emitter open and 50.0 maximum collector to emitter reverse voltage and 7.0 maximum emitter to base voltage,static,collector open
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal
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Internal Junction Configuration
npn
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Overall Diameter
0.320 inches nominal
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Terminal Length
1.500 inches minimum