DMS87023B

Semiconductor Devices and Associated Hardware

TRANSISTOR

DMS87023B

5961-00-883-6386

5961 - Semiconductor Devices and Associated Hardware

Defense Electronics Supply Center

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Technical Characteristics

  • Overall Length

    0.188 inches nominal

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Specification/Standard Data

    80131-release5238 professional/industrial association specification

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Current Rating Per Characteristic

    10.00 milliamperes source cutoff current minimum and 20.00 milliamperes source cutoff current maximum

  • Terminal Circle Diameter

    0.100 inches nominal

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Diameter

    0.219 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector absolute

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 15.0 maximum drain to source voltage and 30.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Terminal Length

    0.500 inches minimum

Certified to
AS6081 Methods

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