2N1016B
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1016B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
0.547 inches maximum
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Overall Diameter
1.094 inches maximum
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Mounting Facility Quantity
1
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Nominal Thread Size
0.312 inches
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to emitter voltage, dc and
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Current Rating Per Characteristic
7.50 amperes maximum collector current, dc
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Terminal Type And Quantity
2 tab, solder lug
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Terminal Type And Quantity
1 tab, solder lug and
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Thread Series Designator
unf
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Current Rating Per Characteristic
5.00 amperes maximum base current, dc and
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to emitter voltage/static/base open
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to base voltage, dc and
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Mounting Method
threaded stud
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Internal Configuration
junction contact
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Inclosure Material
metal