2N1050
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1050
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
-
Overall Diameter
0.450 inches nominal
-
Overall Length
0.205 inches nominal
-
Mounting Method
threaded stud
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Facility Quantity
1
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Thread Series Designator
unc
-
Specification/Standard Data
80131-release2801 professional/industrial association specification
-
Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector minimum
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Features Provided
hermetically sealed case
-
Nominal Thread Size
0.138 inches
-
Semiconductor Material
silicon
-
Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Inclosure Material
metal