2N1050
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1050
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Diameter
0.450 inches nominal
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Overall Length
0.205 inches nominal
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Thread Series Designator
unc
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Specification/Standard Data
80131-release2801 professional/industrial association specification
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector minimum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.138 inches
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Semiconductor Material
silicon
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal