2N1119
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1119
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
10.0 maximum breakdown voltage,collector-to-base,emitter open
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Power Rating Per Characteristic
150.0 milliwatts maximum collector power dissipation
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Terminal Type And Quantity
3 uninsulated wire lead
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Current Rating Per Characteristic
50.00 milliamperes maximum collector current,rms value of alternation component
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Transfer Ratio
25.0 nominal small-signal short-circuit forward current transfer ratio,common-emitter
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Overall Length
0.260 inches maximum
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Terminal Length
1.500 inches minimum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5