2N1016B

Technical Characteristics

• Test Data Document

  81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Mounting Method

  threaded stud

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Facility Quantity

  1

• Thread Series Designator

  unf

• Overall Diameter

  1.240 inches minimum and 1.280 inches maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Overall Length

  0.500 inches minimum and 0.560 inches maximum

• Features Provided

  hermetically sealed case

• Current Rating Per Characteristic

  7.50 amperes source cutoff current maximum

• Semiconductor Material

  silicon

• Nominal Thread Size

  0.312 inches

• Power Rating Per Characteristic

  150.0 watts small-signal input power, common-collector minimum

• Specification/Standard Data

  81349-mil-s-19500/102 government specification

• Voltage Rating In Volts Per Characteristic

  100.0 maximum collector to base voltage/static/emitter open and 100.0 maximum collector to emitter voltage/static/base open and 25.0 maximum emitter to base voltage, static, collector open

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Terminal Type And Quantity

  1 threaded stud and 2 tab, solder lug

• Inclosure Material

  metal