2N893
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N893
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
anode
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Specification/Standard Data
80131-release4709 professional/industrial association specification
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Current Rating Per Characteristic
250.00 milliamperes forward current, total rms nanoamperes and 50.00 microamperes forward current, total rms preset
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Overall Diameter
0.210 inches nominal
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Special Features
junction pattern arrangement: pnpn
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Terminal Length
0.500 inches minimum
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Overall Length
0.190 inches nominal
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
75.0 deg celsius case
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Voltage Rating In Volts Per Characteristic
0.7 maximum gate trigger voltage, dc and 1.0 maximum on-state voltage, dc
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Terminal Type And Quantity
3 uninsulated wire lead