2N779
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N779
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
germanium
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Voltage Rating In Volts Per Characteristic
15.0 maximum collector to emitter voltage,dc with base short-circuited to emitter and 2.0 maximum emitter to base voltage,dc
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Power Rating Per Characteristic
60.0 milliwatts maximum collector power dissipation
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Inclosure Material
metal
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.230 inches maximum
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Terminal Circle Diameter
0.100 inches nominal
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Current Rating Per Characteristic
50.00 milliamperes maximum collector current,dc
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Terminal Type And Quantity
3 uninsulated wire lead