JAN2N2323A
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
JAN2N2323A
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Special Features
junction pattern arrangement: pnpn
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Inclosure Material
metal
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Current Rating Per Characteristic
220.00 milliamperes forward current, total rms megahertz
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Terminal Length
1.500 inches minimum and 1.750 inches maximum
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Electrode Internally-Electrically Connected To Case
anode
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Voltage Rating In Volts Per Characteristic
2.2 maximum forward voltage, peak and 1.0 maximum gate trigger voltage, dc and 50.0 maximum reverse voltage, peak
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Internal Configuration
junction contact
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Specification/Standard Data
81349-mil-s-19500/276 government specification
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Features Provided
hermetically sealed case
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Semiconductor Material
silicon
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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~1
data on certain environmental and performanc
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type