11151139-1

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Overall Height

  0.200 inches maximum

• Mounting Method

  terminal

• Terminal Type And Quantity

  8 uninsulated wire lead

• Current Rating Per Characteristic

  115.00 milliamperes source cutoff current preset all semiconductor device diode and 75.00 milliamperes forward current, average minor all semiconductor device diode and 225.00 milliamperes forward current, average blank all semiconductor device diode

• Features Provided

  hermetically sealed case

• Special Features

  all semiconductor device diode junction pattern arrangement: pn

• Voltage Rating In Volts Per Characteristic

  20.0 maximum working peak reverse voltage, maximum peak total value, gate terminal open-circuited all semiconductor device diode

• Terminal Length

  0.900 inches minimum

• Component Name And Quantity

  4 semiconductor device diode

• Overall Width

  0.468 inches maximum

• Inclosure Material

  metal

• Overall Length

  0.500 inches maximum

• Power Rating Per Characteristic

  250.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode