JAN2N718

Semiconductor Devices and Associated Hardware

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JAN2N718

5961-00-905-8536

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Special Features

    junction pattern arrangement: npn

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Features Provided

    hermetically sealed case

  • Overall Length

    0.210 inches maximum

  • Semiconductor Material

    silicon

  • Terminal Length

    0.500 inches minimum

  • Inclosure Material

    metal

  • Power Rating Per Characteristic

    750.0 milliwatts small-signal input power, common-collector minimum

  • Terminal Circle Diameter

    0.100 inches nominal

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Internal Configuration

    junction contact

Certified to
AS6081 Methods

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