JAN2N335
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N335
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Mounting Method
terminal
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Semiconductor Material
silicon
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Power Rating Per Characteristic
150.0 milliwatts maximum total power dissipation
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Transfer Ratio
0.967 minimum small-signal short-circuit forward current transfer ratio, common-base and 0.989 maximum small-signal short-circuit forward current transfer ratio, common-base
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Precious Material And Location
terminal surfaces gold
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Precious Material
gold
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Test Data Document
73030-570169 drawing
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Internal Junction Configuration
npn
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Voltage Rating In Volts Per Characteristic
45.0 maximum collector to base voltage/static/emitter open and 45.0 maximum collector to emitter voltage/static/base open and 1.0 maximum emitter to base voltage, static, collector open
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Terminal Type And Quantity
3 uninsulated wire lead