500534-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

500534-1

5961-00-907-3402

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

TRANSISTOR

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Technical Characteristics

  • Internal Junction Configuration

    npn

  • Current Rating Per Characteristic

    50.00 milliamperes maximum collector current, dc

  • Precious Material And Location

    terminal surface gold

  • Precious Material

    gold

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Inclosure Material

    metal

  • Overall Length

    0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.230 inches maximum

  • Internal Configuration

    junction contact

  • Mounting Method

    terminal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • ~1

    voltage, dc and 3.0 maximum emitter to base voltage, dc

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum collector to base voltage, dc and 15.0 maximum collector to emitter

  • Power Rating Per Characteristic

    200.0 milliwatts maximum collector power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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