2N1016E
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1016E
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Overall Diameter
1.281 inches maximum
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Specification/Standard Data
80131-release2653 professional/industrial association specification
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Nominal Thread Size
0.190 inches
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Thread Series Designator
unf
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Internal Junction Configuration
npn
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector preset
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Overall Length
0.546 inches maximum
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Voltage Rating In Volts Per Characteristic
250.0 maximum breakdown voltage, collector-to-emitter, base open and 25.0 maximum breakdown voltage, emitter-to-base, collector open
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Inclosure Material
metal
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Current Rating Per Characteristic
5.00 amperes source cutoff current minimum and 7.50 amperes source cutoff current maximum