2N3212

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3212

5961-00-914-6006

5961 - Semiconductor Devices and Associated Hardware

Silicon Transistor Corp

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-base, emitter open and 2.0 maximum breakdown voltage, emitter-to-base, collector open and 80.0 maximum breakdown voltage, collector-to-emitter, base open

  • Mounting Method

    unthreaded hole

  • Semiconductor Material

    germanium

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    5.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Power Rating Per Characteristic

    14.0 watts small-signal input power, common-collector minimum

  • Special Features

    junction pattern arrangement: pnp

  • Overall Length

    0.260 inches maximum

  • Specification/Standard Data

    80131-release4665 professional/industrial association specification

  • Internal Configuration

    junction contact

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Overall Diameter

    0.320 inches maximum

  • Features Provided

    hermetically sealed case

  • Mounting Facility Quantity

    2

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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