2N2879

Technical Characteristics

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open and 8.0 maximum breakdown voltage, emitter-to-base, collector open

• Terminal Type And Quantity

  4 tab, solder lug

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Inclosure Material

  metal

• Power Rating Per Characteristic

  30.0 watts small-signal input power, common-collector minimum

• Specification/Standard Data

  80131-release4245 professional/industrial association specification

• Mounting Method

  threaded stud

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Facility Quantity

  1

• Nominal Thread Size

  0.190 inches

• Thread Series Designator

  unf

• Current Rating Per Characteristic

  500.00 amperes source cutoff current minimum and 5.00 amperes source cutoff current maximum

• Overall Width Across Flats

  0.437 inches maximum

• Overall Length

  0.672 inches nominal

• Internal Configuration

  junction contact