2N2481

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N2481

5961-00-926-0135

5961 - Semiconductor Devices and Associated Hardware

Joint Army-Navy Specifications

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum collector to base voltage/static/emitter open and 15.0 maximum collector to emitter voltage/static/base open and 30.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 5.0 maximum emitter to base voltage,

  • Test Data Document

    81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

  • ~1

    static, collector open

  • ~1

    data on certain environmental and performanc

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Specification/Standard Data

    81349-mil-s-19500/268 government specification

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Current Rating Per Characteristic

    10.00 milliamperes source cutoff current maximum

  • Features Provided

    hermetically sealed case

  • Terminal Length

    0.500 inches minimum and 0.750 inches maximum

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    1.2 watts small-signal input power, common-collector preset

  • Precious Material And Location

    terminal surface option gold

  • Inclosure Material

    metal

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

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AS6081 Methods

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