FBN-L109
Semiconductor Devices and Associated Hardware
TRANSISTOR
FBN-L109
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
90.0 minimum collector-to-emitter substaining voltage, resistance between base and emitter
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Terminal Length
0.500 inches minimum
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Current Rating Per Characteristic
1.00 amperes source cutoff current maximum
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Precious Material And Location
terminal surface option gold
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Inclosure Material
metal
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End Item Identification
satallite communication term; phoenix missile; sidewinder missile; sparrow missile; harpoon missile; teletype, model 28; consolidated space opns center; ticonderoga class cg (47); spruance class dd (963)
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Special Features
weapon system essential; junction pattern arrangement: npn
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Criticality Code Justification
feat
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Overall Length
0.260 inches maximum
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Precious Material
gold
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector minimum
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Semiconductor Material
silicon