PDS-910

Semiconductor Devices and Associated Hardware

TRANSISTOR

PDS-910

5961-00-930-2764

5961 - Semiconductor Devices and Associated Hardware

Trw Electronics And Defense Sector

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Technical Characteristics

  • Internal Junction Configuration

    npn

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Configuration

    junction contact

  • Overall Length

    0.567 inches maximum

  • Thread Series Designator

    unf

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Current Rating Per Characteristic

    10.00 amperes maximum collector current, dc

  • Voltage Rating In Volts Per Characteristic

    120.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximu

  • ~2

    oltage, emitter-to-base, collector open

  • Nominal Thread Size

    0.190 inches

  • Overall Width Across Flats

    0.552 inches minimum and 0.567 inches maximum

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    1 threaded stud and 2 uninsulated wire lead w/terminal lug

  • Power Rating Per Characteristic

    40.0 watts maximum collector power dissipation

  • ~1

    m breakdown voltage, collector-to-emitter, base open and 8.0 maximum breakdown v

  • Semiconductor Material

    silicon

  • Features Provided

    hermetically sealed case

Certified to
AS6081 Methods

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