2N2081A
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2081A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Overall Diameter
1.250 inches maximum
-
Mounting Facility Quantity
1
-
Electrode Internally-Electrically Connected To Case
collector
-
Semiconductor Material
germanium
-
Power Rating Per Characteristic
170.0 watts maximum collector power dissipation
-
Terminal Type And Quantity
3 tab, solder lug
-
Specification/Standard Data
80131-release3582 professional/industrial association specification
-
Thread Series Designator
unf
-
Special Features
junction pattern arrangement: pnp
-
Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
-
Current Rating Per Characteristic
15.00 amperes maximum collector current, dc
-
Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-base, emitter open and 45.0 maximum breakdown voltage, collector-to-emitter, base open and 25.0 maximum breakdown voltage, emitter-to-base, collector open
-
Nominal Thread Size
0.190 inches
-
Features Provided
hermetically sealed case
-
Mounting Method
threaded stud
-
Internal Configuration
junction contact
-
Overall Length
0.520 inches maximum
-
Inclosure Material
metal