C12B

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

C12B

5961-00-932-3066

5961 - Semiconductor Devices and Associated Hardware

General Electric Co

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Nominal Thread Size

    0.190 inches

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    200.0 maximum breakover voltage,dc

  • Current Rating Per Characteristic

    60.00 amperes maximum average forward current averaged over a full 60-hz cycle

  • Power Rating Per Characteristic

    5.0 watts maximum peak gate power dissipation

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Thread Series Designator

    unf

  • Inclosure Material

    metal

  • Overall Length

    0.400 inches maximum

  • Mounting Facility Quantity

    1

  • Electrode Internally-Electrically Connected To Case

    anode

  • Mounting Method

    threaded stud

  • Overall Width Across Flats

    0.437 inches nominal

  • Terminal Type And Quantity

    2 tab,solder lug and 1 threaded stud

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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