2N3260

Technical Characteristics

• Power Rating Per Characteristic

  200.0 watts small-signal input power, common-collector minimum

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Current Rating Per Characteristic

  10.00 milliamperes source cutoff current minimum and 30.00 milliamperes source cutoff current maximum

• Thread Series Designator

  unf

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Terminal Type And Quantity

  3 tab, solder lug

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Overall Width Across Flats

  0.875 inches maximum

• Voltage Rating In Volts Per Characteristic

  200.0 maximum breakdown voltage, collector-to-base, emitter open and 200.0 maximum breakdown voltage, collector-to-emitter, base open and 10.0 maximum breakdown voltage, emitter-to-base, collector open

• Nominal Thread Size

  0.312 inches

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius case

• Overall Length

  0.750 inches maximum

• Overall Diameter

  0.844 inches maximum

• Inclosure Material

  metal