2N3583

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3583

5961-00-934-2999

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • Specification/Standard Data

    80131-release4901 professional/industrial association specification

  • Overall Diameter

    0.620 inches maximum

  • Overall Length

    0.340 inches maximum

  • Power Rating Per Characteristic

    35.0 watts small-signal input power, common-collector minimum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current minimum and 1.00 amperes source cutoff current maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Voltage Rating In Volts Per Characteristic

    250.0 maximum breakdown voltage, collector-to-base, emitter open and 175.0 maximum breakdown voltage, collector-to-emitter, base open and 6.0 maximum breakdown voltage, emitter-to-base, collector open

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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