2N3561
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N3561
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Overall Length
0.4000 inches maximum
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Mounting Facility Quantity
1
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Electrode Internally-Electrically Connected To Case
anode
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Voltage Rating In Volts Per Characteristic
800.0 maximum breakover voltage, dc
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Current Rating Per Characteristic
250.00 amperes maximum collector current, dc
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Power Rating Per Characteristic
3.0 watts maximum peak gate power dissipation
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Special Features
junction pattern arrangement: pnpn
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Thread Series Designator
unf
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
metal
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Overall Diameter
0.370 inches nominal
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Internal Configuration
junction contact
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Overall Width Across Flats
1.949 inches maximum
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Nominal Thread Size
1.000 inches
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Specification/Standard Data
80131-release4789 professional/industrial association specification