TI3040W654
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
TI3040W654
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Special Features
design analysis; junction pattern arrangement: pnpn
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Thread Series Designator
unf
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Electrode Internally-Electrically Connected To Case
anode
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.544 inches minimum and 0.562 inches maximum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
3.0 maximum gate trigger voltage, dc and 10.0 maximum peak positive gate voltage and -10.0 maximum peak negative gate voltage and 210.0 maximum forward voltage, total rms and 300.0 maximum breakdown voltage, dc
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Overall Length
0.330 inches minimum and 0.505 inches maximum
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Nominal Thread Size
0.250 inches
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Current Rating Per Characteristic
2.00 amperes maximum peak positive gate current and 10.00 amperes maximum forward current, average and 50.00 milliamperes maximum gate trigger current, dc and 25.00 milliamperes maximum holding current, dc
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Power Rating Per Characteristic
10.0 watts maximum peak gate power dissipation
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Inclosure Material
metal
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Internal Configuration
junction contact