TI3040W654

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

TI3040W654

5961-00-942-1211

5961 - Semiconductor Devices and Associated Hardware

Texas Instruments Incorporated

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Special Features

    design analysis; junction pattern arrangement: pnpn

  • Thread Series Designator

    unf

  • Terminal Type And Quantity

    2 tab, solder lug and 1 threaded stud

  • Electrode Internally-Electrically Connected To Case

    anode

  • Features Provided

    hermetically sealed case

  • Overall Width Across Flats

    0.544 inches minimum and 0.562 inches maximum

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    3.0 maximum gate trigger voltage, dc and 10.0 maximum peak positive gate voltage and -10.0 maximum peak negative gate voltage and 210.0 maximum forward voltage, total rms and 300.0 maximum breakdown voltage, dc

  • Overall Length

    0.330 inches minimum and 0.505 inches maximum

  • Mounting Facility Quantity

    1

  • Mounting Method

    threaded stud

  • Nominal Thread Size

    0.250 inches

  • Current Rating Per Characteristic

    2.00 amperes maximum peak positive gate current and 10.00 amperes maximum forward current, average and 50.00 milliamperes maximum gate trigger current, dc and 25.00 milliamperes maximum holding current, dc

  • Power Rating Per Characteristic

    10.0 watts maximum peak gate power dissipation

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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