A60G101010DC00BX41

Technical Characteristics

• Component Function Relationship

  matched

• Semiconductor Material

  silicon all transistor

• Nominal Thread Size

  0.312 inches all transistor

• Power Rating Per Characteristic

  150.0 watts small-signal input power, common-collector absolute all transistor

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, collector-to-emitter, base open all transistor

• Internal Junction Configuration

  npn all transistor

• Features Provided

  hermetically sealed case

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-81 all transistor

• Terminal Type And Quantity

  2 pin all transistor and 1 threaded stud all transistor

• Internal Configuration

  junction contact all transistor

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum all transistor and 20.00 milliamperes zero-gate-voltage source current preset all transistor

• Mounting Facility Quantity

  1 all transistor

• Thread Series Designator

  unf all transistor

• Inclosure Material

  metal all transistor

• Component Name And Quantity

  2 transistor

• Overall Diameter

  1.230 inches minimum all transistor and 1.300 inches maximum all transistor

• Mounting Method

  threaded stud all transistor

• Overall Length

  0.915 inches nominal all transistor