2N2383
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2383
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
4
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage,collector-to-base,emitter open and 60.0 maximum breakdown voltage,collector-to-emitter,base open and 8.0 maximum breakdown voltage,emitter-to-base,collector open
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Power Rating Per Characteristic
85.0 watts maximum collector power dissipation
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Specification/Standard Data
80131-release4367 professional/industrial association specification
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Terminal Type And Quantity
3 wire hook
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Current Rating Per Characteristic
2.00 amperes maximum collector current,dc
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Mounting Method
unthreaded hole
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Internal Junction Configuration
npn
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Overall Diameter
0.675 inches nominal
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Overall Length
0.860 inches nominal