1850-0405
Semiconductor Devices and Associated Hardware
TRANSISTOR
1850-0405
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-base, emitter open and 2.0 maximum breakdown voltage, emitter-to-base, collector open and 30.0 maximum breakdown voltage, collector-to-emitter, base open
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Semiconductor Material
germanium
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Inclosure Material
metal
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
143.0 milliwatts small-signal input power, common-collector minimum
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Special Features
junction pattern arrangement: pnp
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Overall Length
0.260 inches maximum
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Overall Diameter
0.320 inches maximum
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Features Provided
hermetically sealed case