2N3215
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3215
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage, collector-to-base, emitter open and 2.0 maximum breakdown voltage, emitter-to-base, collector open and 30.0 maximum breakdown voltage, collector-to-emitter, base open
-
Mounting Facility Quantity
2
-
Mounting Method
unthreaded hole
-
Semiconductor Material
germanium
-
Inclosure Material
metal
-
Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Power Rating Per Characteristic
143.0 milliwatts small-signal input power, common-collector minimum
-
Special Features
junction pattern arrangement: pnp
-
Overall Length
0.260 inches maximum
-
Internal Configuration
junction contact
-
Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
-
Overall Diameter
0.320 inches maximum
-
Features Provided
hermetically sealed case