5L.5511.102.78
Semiconductor Devices and Associated Hardware
TRANSISTOR
5L.5511.102.78
5961 - Semiconductor Devices and Associated Hardware
Eads Deutschland Gmbh -Verteidigung
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
170.0 watts small-signal input power, common-collector minimum
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Semiconductor Material
germanium
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Inclosure Material
metal
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Internal Junction Configuration
pnp
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Nominal Thread Size
0.190 inches
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Thread Series Designator
unf
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Overall Diameter
1.220 inches maximum
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Current Rating Per Characteristic
30.00 amperes source cutoff current minimum and 30.00 amperes source cutoff current maximum
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Overall Length
0.360 inches maximum
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open and 45.0 maximum breakdown voltage, collector-to-emitter, base open and 30.0 maximum breakdown voltage, emitter-to-base, collector open
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Features Provided
hermetically sealed case
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Specification/Standard Data
80131-release3481 professional/industrial association specification