2N3066

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3066

5961-00-946-1953

5961 - Semiconductor Devices and Associated Hardware

Telcom Semiconductor Inc

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 30.0 maximum drain to source voltage

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Specification/Standard Data

    80131-release4584 professional/industrial association specification

  • Current Rating Per Characteristic

    100.00 milliamperes source cutoff current maximum

  • Special Features

    junction pattern arrangement: np

  • Channel Polarity And Control Type (Non-Core)

    n-channel junction type

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector absolute

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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