501M
Semiconductor Devices and Associated Hardware
TRANSISTOR
501M
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Precious Material And Location
terminal surfaces gold
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Precious Material
gold
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Overall Length
0.260 inches maximum
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Terminal Length
1.000 inches minimum
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Overall Diameter
0.370 inches maximum
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Terminal Circle Diameter
0.100 inches nominal
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Voltage Rating In Volts Per Characteristic
-50.0 maximum breakdown voltage, collector-to-base, emitter open and -35.0 maximum breakdown voltage, collector-to-emitter, base open and -5.2 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
-600.00 milliamperes maximum base current, dc
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Power Rating Per Characteristic
2.0 watts maximum forward power dissipation, dc
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Test Data Document
04655-13-105262 drawing
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Terminal Type And Quantity
3 uninsulated wire lead